Thavar, R., & Fletcher, J. C. Q. (2016). III-V OMVPE growth and characterisation of graded AlₓGaₓ₋₁As-GaAs layers and heterointerfaces for the development of GRIN-SCH lasers and Gunn diodes. Department of Chemical Engineering.
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Chicago Style (17th ed.) Citation
Thavar, Rajan, and Jack C Q. Fletcher. III-V OMVPE Growth and Characterisation of Graded AlₓGaₓ₋₁As-GaAs Layers and Heterointerfaces for the Development of GRIN-SCH Lasers and Gunn Diodes. Department of Chemical Engineering, 2016.
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MLA (9th ed.) Citation
Thavar, Rajan, and Jack C Q. Fletcher. III-V OMVPE Growth and Characterisation of Graded AlₓGaₓ₋₁As-GaAs Layers and Heterointerfaces for the Development of GRIN-SCH Lasers and Gunn Diodes. Department of Chemical Engineering, 2016.
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Warning: These citations may not always be 100% accurate.