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A study of copper diffusion through Pd₂Si thin films
It is now generally recognized that unless an alternative for aluminium is found the resistivity of the metal interconnects will soon limit device performance. Copper, with its low resistivity and greater resistance to electromigration is one of the obvious substitutes. However, before aluminium can...
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| Format: | Thesis |
| Language: | English |
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Department of Physics
2016
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| _version_ | 1867613323499929600 |
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| access_status_str | Open Access |
| author | Geduld, Dieter Rudi |
| author2 | Comrie, Craig M |
| author_browse | Comrie, Craig M Geduld, Dieter Rudi |
| author_facet | Comrie, Craig M Geduld, Dieter Rudi |
| author_sort | Geduld, Dieter Rudi |
| collection | Thesis |
| description | It is now generally recognized that unless an alternative for aluminium is found the resistivity of the metal interconnects will soon limit device performance. Copper, with its low resistivity and greater resistance to electromigration is one of the obvious substitutes. However, before aluminium can be replaced by copper, a careful study of the reactivity of copper with metal-silicides used in devices needs to be carried out. This study involves a dynamic RBS investigation of the reaction of copper with Pd₂Si films grown on Si<100> and Si<lll> substrates. It was found that copper diffused through the Pd₂Si layer and reacted with the single crystal silicon substrate at relatively low temperatures. The onset temperature observed for copper diffusion was found to differ for Pd2Si films grown on the two different substrate orientations, Si<100> and Si<lll>. Measurements of the activation energies for Cu-silicide growth on Pd₂Si/Si<100> and Pd₂Si/Si<lll> were also made. |
| format | Thesis |
| id | oai:open.uct.ac.za:11427/18431 |
| institution | University of Cape Town (South Africa) |
| language | eng |
| last_indexed | 2026-06-10T12:34:17.944Z |
| license_str | Not specified — see source repository |
| provenance_str_mv | Harvested via OAI-PMH from UCTD — University of Cape Town Open Access Repository |
| publishDate | 2016 |
| publishDateRange | 2016 |
| publishDateSort | 2016 |
| publisher | Department of Physics |
| publisherStr | Department of Physics |
| record_format | dspace |
| source_str | UCTD — University of Cape Town Open Access Repository |
| spelling | oai:open.uct.ac.za:11427/18431 A study of copper diffusion through Pd₂Si thin films Geduld, Dieter Rudi Comrie, Craig M Physics It is now generally recognized that unless an alternative for aluminium is found the resistivity of the metal interconnects will soon limit device performance. Copper, with its low resistivity and greater resistance to electromigration is one of the obvious substitutes. However, before aluminium can be replaced by copper, a careful study of the reactivity of copper with metal-silicides used in devices needs to be carried out. This study involves a dynamic RBS investigation of the reaction of copper with Pd₂Si films grown on Si<100> and Si<lll> substrates. It was found that copper diffused through the Pd₂Si layer and reacted with the single crystal silicon substrate at relatively low temperatures. The onset temperature observed for copper diffusion was found to differ for Pd2Si films grown on the two different substrate orientations, Si<100> and Si<lll>. Measurements of the activation energies for Cu-silicide growth on Pd₂Si/Si<100> and Pd₂Si/Si<lll> were also made. 2016-03-30T14:51:55Z 2016-03-30T14:51:55Z 1997 Master Thesis Masters MSc http://hdl.handle.net/11427/18431 eng application/pdf Department of Physics Faculty of Science University of Cape Town |
| spellingShingle | Physics Geduld, Dieter Rudi A study of copper diffusion through Pd₂Si thin films |
| thesis_degree_str | Master's |
| title | A study of copper diffusion through Pd₂Si thin films |
| title_full | A study of copper diffusion through Pd₂Si thin films |
| title_fullStr | A study of copper diffusion through Pd₂Si thin films |
| title_full_unstemmed | A study of copper diffusion through Pd₂Si thin films |
| title_short | A study of copper diffusion through Pd₂Si thin films |
| title_sort | study of copper diffusion through pd₂si thin films |
| topic | Physics |
| url | http://hdl.handle.net/11427/18431 |
| work_keys_str_mv | AT gedulddieterrudi astudyofcopperdiffusionthroughpd2sithinfilms AT gedulddieterrudi studyofcopperdiffusionthroughpd2sithinfilms |