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Bibliography: p. 197-203.
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| Other Authors: | |
| Format: | Thesis |
| Language: | English |
| Published: |
Department of Physics
2014
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| _version_ | 1867613914330562560 |
|---|---|
| access_status_str | Open Access |
| author | Meyer, Kevin Alan |
| author2 | Prozesky, Victor M |
| author_browse | Meyer, Kevin Alan Prozesky, Victor M |
| author_facet | Prozesky, Victor M Meyer, Kevin Alan |
| author_sort | Meyer, Kevin Alan |
| collection | Thesis |
| description | Bibliography: p. 197-203. |
| format | Thesis |
| id | oai:open.uct.ac.za:11427/6538 |
| institution | University of Cape Town (South Africa) |
| language | eng |
| last_indexed | 2026-06-10T12:43:43.059Z |
| license_str | Not specified — see source repository |
| provenance_str_mv | Harvested via OAI-PMH from UCTD — University of Cape Town Open Access Repository |
| publishDate | 2014 |
| publishDateRange | 2014 |
| publishDateSort | 2014 |
| publisher | Department of Physics |
| publisherStr | Department of Physics |
| record_format | dspace |
| source_str | UCTD — University of Cape Town Open Access Repository |
| spelling | oai:open.uct.ac.za:11427/6538 Development of a plasma source ion implantation facility for the modification of materials' surfaces Meyer, Kevin Alan Prozesky, Victor M Comrie, Craig M Alport, Michael J Physics Bibliography: p. 197-203. In Plasma Source Ion Implantation high energy [10-50 keV] plasma ions are implanted into materials to modify surface properties, achieving surface hardening, increased wear and corrosion resistance. Plasma Source Ion Implantation is alos used for doping semiconductors and could form an essential step in the manufacture of multilayered wafers. This thesis describes the development and construction of the plasma implantation facility at the Materials Research Group of the Naitonal Accelerator Centre; in particular, the development of the Plasma Assisted Materials Modification Laboratory, the analytical tools available at the Materials Research Group and surrounding universities, basic research into the implantation of steels, the x-rays emitted as a side-effect of plasma source ion implantation and the development of an analytical technique of interest to silicon wafer-cutting technologies. 2014-08-13T20:08:22Z 2014-08-13T20:08:22Z 2001 Doctoral Thesis Doctoral PhD http://hdl.handle.net/11427/6538 eng application/pdf Department of Physics Faculty of Science University of Cape Town |
| spellingShingle | Physics Meyer, Kevin Alan Development of a plasma source ion implantation facility for the modification of materials' surfaces |
| thesis_degree_str | Doctoral |
| title | Development of a plasma source ion implantation facility for the modification of materials' surfaces |
| title_full | Development of a plasma source ion implantation facility for the modification of materials' surfaces |
| title_fullStr | Development of a plasma source ion implantation facility for the modification of materials' surfaces |
| title_full_unstemmed | Development of a plasma source ion implantation facility for the modification of materials' surfaces |
| title_short | Development of a plasma source ion implantation facility for the modification of materials' surfaces |
| title_sort | development of a plasma source ion implantation facility for the modification of materials surfaces |
| topic | Physics |
| url | http://hdl.handle.net/11427/6538 |
| work_keys_str_mv | AT meyerkevinalan developmentofaplasmasourceionimplantationfacilityforthemodificationofmaterialssurfaces |