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Gallium arsenide field effect transistors microstrip integrated circuit dielectric resonator oscillators

Bibliography: leaves 175-177.

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Bibliographic Details
Main Author: Crouch, David Andrew
Other Authors: Downing, B J
Format: Thesis
Language:English
Published: Department of Electrical Engineering 2014
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access_status_str Open Access
author Crouch, David Andrew
author2 Downing, B J
author_browse Crouch, David Andrew
Downing, B J
author_facet Downing, B J
Crouch, David Andrew
author_sort Crouch, David Andrew
collection Thesis
description Bibliography: leaves 175-177.
format Thesis
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institution University of Cape Town (South Africa)
language eng
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license_str Not specified — see source repository
provenance_str_mv Harvested via OAI-PMH from UCTD — University of Cape Town Open Access Repository
publishDate 2014
publishDateRange 2014
publishDateSort 2014
publisher Department of Electrical Engineering
publisherStr Department of Electrical Engineering
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source_str UCTD — University of Cape Town Open Access Repository
spelling oai:open.uct.ac.za:11427/8329 Gallium arsenide field effect transistors microstrip integrated circuit dielectric resonator oscillators Crouch, David Andrew Downing, B J Electrical and Electronic Engineering Bibliography: leaves 175-177. This thesis is concerned with Gallium Arsenide Metal Semiconductor Field Effect Transistor Microstrip Integrated Circuit Dielectric Resonator Oscillators (GaAs MESFET MIC DROs) - the different types, their design and their performance compared to other high Q factor (ie narrowband) microwave oscillators. The thesis has three major objectives. The first is to collate the information required to build microwave DROs. The second is to present the practical results obtained from Dielectric Resonator Bandreject and Bandpass filters (DR BRFs and DR BPFs). The last is to present and compare results from a DR stabilised microstrip oscillator and three types of series feedback DROs. Narrowband oscillators are usually evaluated in terms of their frequency stability, reliability, size, cost, efficiency and output power characteristics. In terms of these parameters DROs outperform Gunn cavity oscillators and are only bettered by crystal locked sources in terms of frequency temperature stability and long-term stability. The components of a GaAs MESFET MIC DRO possess ideal properties for the construction of a narrowband source with the exception of the long term stability of the GaAs MESFET. GaAs MESFET•DROs have the best published DRO results for efficiency, output power, power temperature stability and external Q factor. Basic oscillator theory derived by Kurokawa can be applied to both negative resistance and feedback oscillators. Impedance locus, device-line and operating point concepts provide a convenient framework for understanding hysteresis in microwave oscillators. The work by Kurokawa can also be translated into the S-parameter domain which has proved convenient for the design of microwave oscillators. 2014-10-11T12:05:44Z 2014-10-11T12:05:44Z 1988 Master Thesis Masters MSc http://hdl.handle.net/11427/8329 eng application/pdf Department of Electrical Engineering Faculty of Engineering and the Built Environment University of Cape Town
spellingShingle Electrical and Electronic Engineering
Crouch, David Andrew
Gallium arsenide field effect transistors microstrip integrated circuit dielectric resonator oscillators
thesis_degree_str Master's
title Gallium arsenide field effect transistors microstrip integrated circuit dielectric resonator oscillators
title_full Gallium arsenide field effect transistors microstrip integrated circuit dielectric resonator oscillators
title_fullStr Gallium arsenide field effect transistors microstrip integrated circuit dielectric resonator oscillators
title_full_unstemmed Gallium arsenide field effect transistors microstrip integrated circuit dielectric resonator oscillators
title_short Gallium arsenide field effect transistors microstrip integrated circuit dielectric resonator oscillators
title_sort gallium arsenide field effect transistors microstrip integrated circuit dielectric resonator oscillators
topic Electrical and Electronic Engineering
url http://hdl.handle.net/11427/8329
work_keys_str_mv AT crouchdavidandrew galliumarsenidefieldeffecttransistorsmicrostripintegratedcircuitdielectricresonatoroscillators