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Low-Leakage and High-Breakdown Enhancement-Mode InAlGaN/GaN HEMTs Using a Non-Recessed Mist-CVD Li-Doped NiO/Al2O3 p-Gate Stack
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| Published in: | IEEE Journal of the Electron Devices Society |
|---|---|
| Format: | Online Article RSS Article |
| Published: |
2026
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| Subjects: | |
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| _version_ | 1871837934610546688 |
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| collection | WordPress RSS FRELIP Feed Integration |
| container_title | IEEE Journal of the Electron Devices Society |
| description | |
| discipline_display | Electronics |
| discipline_facet | Electronics |
| format | Online Article RSS Article |
| genre | Journal Article |
| id | rss_article:106770 |
| institution | FRELIP |
| journal_source_facet | IEEE Journal of the Electron Devices Society |
| last_indexed | 2026-07-27T03:42:42.680Z |
| publishDate | 2026 |
| publishDateSort | 2026 |
| record_format | rss_article |
| spellingShingle | Low-Leakage and High-Breakdown Enhancement-Mode InAlGaN/GaN HEMTs Using a Non-Recessed Mist-CVD Li-Doped NiO/Al2O3 p-Gate Stack Electronics General Electronics |
| sub_discipline_display | General |
| sub_discipline_facet | General |
| subject_display | Electronics General Electronics |
| subject_facet | Electronics General Electronics |
| title | Low-Leakage and High-Breakdown Enhancement-Mode InAlGaN/GaN HEMTs Using a Non-Recessed Mist-CVD Li-Doped NiO/Al2O3 p-Gate Stack |
| title_alt | HEMTs de modo mejora InAlGaN/GaN de baja fuga y alta ruptura usando una pila de puerta p-GaN de Li:NiO/Al2O3 depositada por CVD de niebla sin rebaje HEMTs InAlGaN/GaN à mode d'enrichissement à faible fuite et haute tension de claquage utilisant un empilement de grille p-GaN non encroisé à base de Li:NiO/Al2O3 déposé par Mist-CVD HEMTs InAlGaN/GaN de Modo de Realce com Baixa Fuga e Alta Ruptura Usando Pilha de Porta p-Gate Li-Dopada NiO/Al2O3 por Mist-CVD sem Recesso |
| title_auth | Low-Leakage and High-Breakdown Enhancement-Mode InAlGaN/GaN HEMTs Using a Non-Recessed Mist-CVD Li-Doped NiO/Al2O3 p-Gate Stack |
| title_es_txt | HEMTs de modo mejora InAlGaN/GaN de baja fuga y alta ruptura usando una pila de puerta p-GaN de Li:NiO/Al2O3 depositada por CVD de niebla sin rebaje |
| title_fr_txt | HEMTs InAlGaN/GaN à mode d'enrichissement à faible fuite et haute tension de claquage utilisant un empilement de grille p-GaN non encroisé à base de Li:NiO/Al2O3 déposé par Mist-CVD |
| title_full | Low-Leakage and High-Breakdown Enhancement-Mode InAlGaN/GaN HEMTs Using a Non-Recessed Mist-CVD Li-Doped NiO/Al2O3 p-Gate Stack |
| title_fullStr | Low-Leakage and High-Breakdown Enhancement-Mode InAlGaN/GaN HEMTs Using a Non-Recessed Mist-CVD Li-Doped NiO/Al2O3 p-Gate Stack |
| title_full_unstemmed | Low-Leakage and High-Breakdown Enhancement-Mode InAlGaN/GaN HEMTs Using a Non-Recessed Mist-CVD Li-Doped NiO/Al2O3 p-Gate Stack |
| title_pt_txt | HEMTs InAlGaN/GaN de Modo de Realce com Baixa Fuga e Alta Ruptura Usando Pilha de Porta p-Gate Li-Dopada NiO/Al2O3 por Mist-CVD sem Recesso |
| title_short | Low-Leakage and High-Breakdown Enhancement-Mode InAlGaN/GaN HEMTs Using a Non-Recessed Mist-CVD Li-Doped NiO/Al2O3 p-Gate Stack |
| title_sort | low-leakage and high-breakdown enhancement-mode inalgan/gan hemts using a non-recessed mist-cvd li-doped nio/al2o3 p-gate stack |
| topic | Electronics General Electronics |
| url | http://ieeexplore.ieee.org/document/11511710 |