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Impact of Voltage-Dependent Resistance Ratio in HfO2-Based Resistive RAM on Non-Stateful Logic

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Published in:IEEE Open Journal of Circuits and Systems
Format: Online Article RSS Article
Published: 2025
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container_title IEEE Open Journal of Circuits and Systems
description
discipline_display Electronics
discipline_facet Electronics
format Online Article
RSS Article
genre Journal Article
id rss_article:74206
institution FRELIP
journal_source_facet IEEE Open Journal of Circuits and Systems
last_indexed 2026-06-20T21:35:10.452Z
publishDate 2025
publishDateSort 2025
record_format rss_article
spellingShingle Impact of Voltage-Dependent Resistance Ratio in HfO2-Based Resistive RAM on Non-Stateful Logic
Electronics
General
Electronics
sub_discipline_display General
sub_discipline_facet General
subject_display Electronics
General
Electronics
subject_facet Electronics
General
Electronics
title Impact of Voltage-Dependent Resistance Ratio in HfO2-Based Resistive RAM on Non-Stateful Logic
title_alt Impacto de la relación de resistencia dependiente del voltaje en RAM resistiva basada en HfO2 en lógica no estatal
Impact du rapport de résistance dépendant de la tension dans la RAM résistive à base de HfO2 sur la logique non statique
Impacto da razão de resistência dependente de tensão em RAM resistiva baseada em HfO2 na lógica não estatal
title_auth Impact of Voltage-Dependent Resistance Ratio in HfO2-Based Resistive RAM on Non-Stateful Logic
title_es_txt Impacto de la relación de resistencia dependiente del voltaje en RAM resistiva basada en HfO2 en lógica no estatal
title_fr_txt Impact du rapport de résistance dépendant de la tension dans la RAM résistive à base de HfO2 sur la logique non statique
title_full Impact of Voltage-Dependent Resistance Ratio in HfO2-Based Resistive RAM on Non-Stateful Logic
title_fullStr Impact of Voltage-Dependent Resistance Ratio in HfO2-Based Resistive RAM on Non-Stateful Logic
title_full_unstemmed Impact of Voltage-Dependent Resistance Ratio in HfO2-Based Resistive RAM on Non-Stateful Logic
title_pt_txt Impacto da razão de resistência dependente de tensão em RAM resistiva baseada em HfO2 na lógica não estatal
title_short Impact of Voltage-Dependent Resistance Ratio in HfO2-Based Resistive RAM on Non-Stateful Logic
title_sort impact of voltage-dependent resistance ratio in hfo2-based resistive ram on non-stateful logic
topic Electronics
General
Electronics
url http://ieeexplore.ieee.org/document/11304252