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Impact of Voltage-Dependent Resistance Ratio in HfO2-Based Resistive RAM on Non-Stateful Logic

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Bibliographic Details
Published in:IEEE Open Journal of Circuits and Systems
Format: Online Article RSS Article
Published: 2025
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container_title IEEE Open Journal of Circuits and Systems
description
discipline_display Electronics
discipline_facet Electronics
format Online Article
RSS Article
genre Journal Article
id rss_article:74206
institution FRELIP
journal_source_facet IEEE Open Journal of Circuits and Systems
publishDate 2025
publishDateSort 2025
record_format rss_article
spellingShingle Impact of Voltage-Dependent Resistance Ratio in HfO2-Based Resistive RAM on Non-Stateful Logic
Electronics
General
Electronics
sub_discipline_display General
sub_discipline_facet General
subject_display Electronics
General
Electronics
Electronics
General
Electronics
subject_facet Electronics
General
Electronics
title Impact of Voltage-Dependent Resistance Ratio in HfO2-Based Resistive RAM on Non-Stateful Logic
title_auth Impact of Voltage-Dependent Resistance Ratio in HfO2-Based Resistive RAM on Non-Stateful Logic
title_full Impact of Voltage-Dependent Resistance Ratio in HfO2-Based Resistive RAM on Non-Stateful Logic
title_fullStr Impact of Voltage-Dependent Resistance Ratio in HfO2-Based Resistive RAM on Non-Stateful Logic
title_full_unstemmed Impact of Voltage-Dependent Resistance Ratio in HfO2-Based Resistive RAM on Non-Stateful Logic
title_short Impact of Voltage-Dependent Resistance Ratio in HfO2-Based Resistive RAM on Non-Stateful Logic
title_sort impact of voltage-dependent resistance ratio in hfo2-based resistive ram on non-stateful logic
topic Electronics
General
Electronics
url http://ieeexplore.ieee.org/document/11304252