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III-V OMVPE growth and characterisation of graded AlₓGaₓ₋₁As-GaAs layers and heterointerfaces for the development of GRIN-SCH lasers and Gunn diodes
Bibliography: pages 125-131.
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| Format: | Thesis |
| Language: | English |
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Department of Chemical Engineering
2016
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| _version_ | 1867613158005276672 |
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| access_status_str | Open Access |
| author | Thavar, Rajan |
| author2 | Fletcher, Jack C Q |
| author_browse | Fletcher, Jack C Q Thavar, Rajan |
| author_facet | Fletcher, Jack C Q Thavar, Rajan |
| author_sort | Thavar, Rajan |
| collection | Thesis |
| description | Bibliography: pages 125-131. |
| format | Thesis |
| id | oai:open.uct.ac.za:11427/21501 |
| institution | University of Cape Town (South Africa) |
| language | eng |
| last_indexed | 2026-06-10T12:31:41.113Z |
| license_str | Not specified — see source repository |
| provenance_str_mv | Harvested via OAI-PMH from UCTD — University of Cape Town Open Access Repository |
| publishDate | 2016 |
| publishDateRange | 2016 |
| publishDateSort | 2016 |
| publisher | Department of Chemical Engineering |
| publisherStr | Department of Chemical Engineering |
| record_format | dspace |
| source_str | UCTD — University of Cape Town Open Access Repository |
| spelling | oai:open.uct.ac.za:11427/21501 III-V OMVPE growth and characterisation of graded AlₓGaₓ₋₁As-GaAs layers and heterointerfaces for the development of GRIN-SCH lasers and Gunn diodes Thavar, Rajan Fletcher, Jack C Q Chemical Engineering Bibliography: pages 125-131. AlGaAs-GaAs graded index single confinement heterostructure single quantum well (GRIN-SCH SQW) lasers and both 35 GHz and 94 GHz Gunn diodes have been satisfactorily grown by organometallic vapour phase epitaxy (OMVPE). This work is based on the material development of such device structures and systematically shows the steps taken to achieve the final goal of repeatedly producing high quality devices geared towards small-scale production. The key elements of the process are the realisation of high quality AlGaAs compositionally graded layers, abrupt GaAs-AlGaAs as well as dopant heterointerfaces and silicon-dopant spikes. A consistently high quality of epitaxial GaAs and AlGaAs is achievable with controllable silicon, tellurium and zinc doping on both material systems. The OMVPE system is sufficiently calibrated to grow sharp transitions in GaAs doping interfaces and quantum wells in the order of 2.5 nm. SIMS measurements showed almost square doping profiles in the 35 GHz Gunn diode structure and was able to resolve a 5 nm Si-spike doping layer in GaAs. The SIMS results of the 94 GHz Gunn diode material clearly indicates the presence of all layers with certain measured values evolving exactly as designed. These achievements are attributed to the fine pressure and flow control implemented on the reactor system by using automated steps to control the growth process. 2016-08-24T12:55:18Z 2016-08-24T12:55:18Z 1994 Master Thesis Masters MSc (Eng) http://hdl.handle.net/11427/21501 eng application/pdf Department of Chemical Engineering Faculty of Engineering and the Built Environment University of Cape Town |
| spellingShingle | Chemical Engineering Thavar, Rajan III-V OMVPE growth and characterisation of graded AlₓGaₓ₋₁As-GaAs layers and heterointerfaces for the development of GRIN-SCH lasers and Gunn diodes |
| thesis_degree_str | Master's |
| title | III-V OMVPE growth and characterisation of graded AlₓGaₓ₋₁As-GaAs layers and heterointerfaces for the development of GRIN-SCH lasers and Gunn diodes |
| title_full | III-V OMVPE growth and characterisation of graded AlₓGaₓ₋₁As-GaAs layers and heterointerfaces for the development of GRIN-SCH lasers and Gunn diodes |
| title_fullStr | III-V OMVPE growth and characterisation of graded AlₓGaₓ₋₁As-GaAs layers and heterointerfaces for the development of GRIN-SCH lasers and Gunn diodes |
| title_full_unstemmed | III-V OMVPE growth and characterisation of graded AlₓGaₓ₋₁As-GaAs layers and heterointerfaces for the development of GRIN-SCH lasers and Gunn diodes |
| title_short | III-V OMVPE growth and characterisation of graded AlₓGaₓ₋₁As-GaAs layers and heterointerfaces for the development of GRIN-SCH lasers and Gunn diodes |
| title_sort | iii v omvpe growth and characterisation of graded alₓgaₓ₋₁as gaas layers and heterointerfaces for the development of grin sch lasers and gunn diodes |
| topic | Chemical Engineering |
| url | http://hdl.handle.net/11427/21501 |
| work_keys_str_mv | AT thavarrajan iiivomvpegrowthandcharacterisationofgradedalxgax1asgaaslayersandheterointerfacesforthedevelopmentofgrinschlasersandgunndiodes |